Effects of Protecting Group on Resist Characteristics of Acryl Polymers for 193 nm Lithography
نویسندگان
چکیده
منابع مشابه
Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography
Dissolution behavior of chemically amplified resist polymers for 248-, 193-, and 157-nm lithography The aqueous base development step is one of the most critical processes in modern lithographic imaging technology. Sinusoidal modulation of the exposing light intensity must be converted to a step function in the resist film during the development process. Thus, in designing high-performance resi...
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ژورنال
عنوان ژورنال: Journal of Photopolymer Science and Technology
سال: 2004
ISSN: 0914-9244,1349-6336
DOI: 10.2494/photopolymer.17.483